Dr. Ahoujja attended Kenyon College, where he graduated with a B.A. in physics in 1990. He then went to study at the University of Cincinnati and received his Ph.D. degree in physics in 1996. From October 1996 to September 1998, he was a National Research Council (NCR) resident at the Materials Directorate at the Air Force Research Lab (AFRL) at Wright-Patterson AFB. He then went to the Air Force Institute of Technology (AFIT) and held an associate research position in the Engineering Physics Department until August of 2001. Dr. Ahoujja joined the University of Dayton in August of 2001. He is a faculty member of the Department of Physics and also teaches courses for the Premedical Programs.
- Ph.D., University of Cincinnati, 1996
- B.A., Kenyon College, 1990
- Experimental condensed matter physics
"Temperature-dependent Hall measurements of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5", M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and J. E.Van Nostrand, Appl. Phys. Lett. 80, 1382 (2002).
"Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction," M. Ahoujja, J. L. McFall, Y.K. Yeo, R. L. Hengehold, and J. E. Van Nostrand, Material Science and Engineering B91-92, 285-289 (2002).
"Deep centers and their capture barriers in MOCVD-grown GaN," D. K. Johnstone, M. Ahoujja, Y. K. Yeo, R. L. Hengehold, and L. Guido, Mat. Res. Soc. Symp. Proc. Vol. 692, H2.7 (2002).
"Electrical properties of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5," M. Ahoujja, Y.K. Yeo, R. L. Hengehold, and J. E. Van Nostrand, Mat. Res. Soc. Symp. Proc. Vol. 680E, E3.5 (2001).