After receiving his Ph.D., Dr. Evwaraye taught physics at Morgan State University (1969-1970) and at Antioch College (1970-1973). He then joined General Electric Corporate Research and Development Center in Schenectady, NY (1973-1979). At General Electric, he studied defects in Silicon (Si), Germanium (Ge) and in Gallium Phosphide (GaP). He worked closely with Dr. R. N. Hall. In 1979, Dr. Evwaraye returned to Nigeria as a professor of physics and the foundation dean of the School of Physical Sciences of the University of Port Harcourt, Nigeria. He and his colleagues developed the academic programs and recruited the faculty for the new university. The University now has a student population of over fifteen thousand. When Dr. Evwaraye was on sabbatical leave from the University of Port Harcourt (1986-1987) he joined the University of Dayton Research Institute (UDRI) as a visiting research physicist. Upon his return to the University of Port Harcourt, he was appointed the deputy vice chancellor of the University. Dr. Evwaraye is a fellow of the Nigerian Academy of Science (FAS). After four years of being a deputy vice chancellor, he came to the physics department of the University of Dayton as a visiting professor (1991-1993). He continued his collaboration with UDRI researchers in condensed matter physics. In 1994-1995 he was a senior National Research Council (NRC) fellow at Wright Patterson Air Force Base (WPAFB). In this period, Dr. Evwaraye studied defects in wide-bandgap semiconductors (SiC and GaN) utilizing characterization tools.
In 1995, Dr. Evwaraye joined the physics department at full rank. His collaboration with UDRI and Air Force Research Laboratory (AFRL) scientists continues. It has been a fruitful collaboration. Professor Evwaraye is the author or coauthor of over sixty journal publications and two text books. His teaching ranges from introductory freshman to upper level physics courses. He is active on College and University committees. He is the campus coordinator of STARS--Ohio Board of Regents program for undergraduate research.
- Ph.D., University of Saskatchewan, 1969
- Experimental condensed matter physics especially defects (native defects, ion implantation induced defects, chemical impurities etc.) in semiconductors.
"The Comparative Studies of Chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC." Mat. Res. Soc. Symp., 572, 237 (1999).
A. O. Evwaraye, S. R. Smith and W. C. Mitchel.
"Fermi Level Control and deep levels in semi-insulating 4h-SiC." J. Applied Physics, 86, 5040 (1999). W. C. Mitchel, S. R. Smith, A. O. Evwaraye and S. J. Solomon.
"Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals." Physical Review B, 64, 235202 (2001). E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon and A. O. Evwaraye.
"Capacitance Dispersion in Ion Implanted 4H- and 6H-SiC." J. Applied Physics, 92, 4465 (2002). A. O. Evwaraye, S.R. Smith, W. C. Mitchel and M. A. Capano.